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Abstract

Improved precursors for use in chemical vapor deposition of thin films of low-valent metals are provided, which are sterically saturated and protected from attack of the coreactant in the gas phase. Specific precursors have the formulae: (L).sub.x M.sup.n+ (N(R.sup.1)(C(R.sup.2 R.sup.3)).sub.y N(R.sup.4 R.sup.5)).sub.z (I) (L).sub.x M.sup.n+ (N(R.sup.1)(C(R.sup.2 R.sup.3)).sub.y O(R.sup.4)).sub.z(II) (L).sub.x M.sup.n+ (N(R.sup.1)(C(R.sup.2 R.sup.3)).sub.y S(R.sup.4)).sub.z(III) wherein L is an auxiliary ligand; x is 0-6; M is a metal of valence 1 to 5; n is the oxidation state of the metal; R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are hydrogen or (C.sub.1 -C.sub.12) alkyl groups; y is 1-5, z is 1-n.

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First Claim