Method of producing semiconductor device and rinse for cleaning semiconductor device

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United States of America Patent

PATENT NO 5911836
SERIAL NO

08781774

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Abstract

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A method of producing a semiconductor device, which includes applying a conductive metal film on a semiconductor wafer, applying a photoresist on the conductive metal film, removing the photoresist with a removing agent containing a fluorine compound or at least one basic component selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine and a mixture of an alkanolamine and a reducing agent, and cleaning the resultant semiconductor device by rinsing with a rinse comprising water and at least one peroxide compound. The method of the present invention can provide a highly accurate wiring circuit without corrosion of the conductive metal film.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI GAS CHEMICAL COMPANY INC5-2 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 1008324 ?1008324

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aoyama, Tetsuo Niigata, JP 36 857
Hada, Mayumi Niigata, JP 3 61
Hasemi, Ryuji Niigata, JP 15 241
Ikeda, Hidetoshi Niigata, JP 73 681

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