Method for forming thin film capacitors

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United States of America Patent

PATENT NO 5912044
SERIAL NO

08782205

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Abstract

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Thin film capacitors are formed by a multi-level dry processing method that includes simultaneous ablation of via openings through both the dielectric and the metal electrode layers of a capacitor. Preferably, the dielectric films are formed of barium strontium titanate and the metal electrode layers are formed of platinum. The present invention overcomes the problems associated with the use of strong etchants to sequentially form separate via openings through the electrode and dielectric layers, prevents the potential for delamination of the respective layers during wet etching and the possible undesirable effects of etching solutions on substrate materials.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Farooq, Mukta Shaji Hopewell Junction, NY 7 117
Giri, Ajay P Poughkeepsie, NY 20 322
Patel, Rajesh Shankerial Fremont, CA 1 29

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