Method for removing complex oxide film growth on silicon crystal
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United States of America Patent
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Jun 22, 1999
Grant Date -
N/A
app pub date -
Apr 10, 1997
filing date -
Apr 10, 1996
priority date (Note) -
Expired
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Abstract
A method for treating thin silicon web crystals used to produce solar cells in order to remove complex SiOx contaminants from the web after growth. A dendritic silicon web with {111} surface orientation is immersed in a caustic solution of KOH or NaOH at a temperature at a range from about 80 to about 85.degree. C. for a period of about five to about ten minutes. The caustic solution quickly removes the SiOx contaminants, while leaving relatively unaffected the silicon crystal in the surface. After the caustic solution treatment, the web is rinsed in deionized water and optionally subjected to an acid cleaning with HCL or HF in order to remove any residual contaminants on the web surface.
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