Photovoltaic element having a specific doped layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 22, 1999
Grant Date -
N/A
app pub date -
Sep 19, 1997
filing date -
Sep 19, 1996
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A photovoltaic element having a semiconductor junction structure, characterized in that said semiconductor junction structure has a doped layer of p-type or n-type composed of a non-single crystalline material containing one or more elements belonging to group IV of the periodic table as a principal constituent thereof, and said doped layer contains a plurality of regions each comprising a diminished density region of said group IV element as the principal constituent of the doped layer such that said group IV element diminished density regions are intermittently distributed in the doped layer. Said semiconductor junction structure has a substantially intrinsic semiconductor layer at least of which being composed of a microcrystalline semiconductor material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully