Porous semiconductor material
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United States of America Patent
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Jun 22, 1999
Grant Date -
N/A
app pub date -
Jun 5, 1996
filing date -
Dec 6, 1993
priority date (Note) -
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Abstract
Porous semiconductor material in the form of at least partly crystalline silicon is produced with a porosity in excess of 90% determined gravimetrically, and voids, crazing and peeling are substantially not observable by scanning electron microscopy at a magnification of 7,000. The porous silicon is dried by supercritical drying. The silicon material has good luminescence properties together with good morphology and crystallinity.
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