Method for forming shallow trench isolation
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United States of America Patent
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Jun 22, 1999
Grant Date -
N/A
app pub date -
Sep 12, 1997
filing date -
Sep 12, 1997
priority date (Note) -
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Abstract
A method of forming a trench isolation is disclosed. The initial step includes forming a first dielectric layer on a substrate of a transistor followed by a second dielectric layer formed on the first dielectric layer. Next, the substrate, the first dielectric layer and the second dielectric layer is patterned and etched to form a trench in the substrate, the first dielectric layer and the second dielectric layer. Next, a third dielectric layer is formed on the surface of the side wall of the trench followed by isotropically etching the bottom of the trench. Finally, a fourth dielectric layer on the surface of the trench is formed and the trench is filled with a dielectric material.
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