Thin film forming method and apparatus

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United States of America Patent

PATENT NO 5916820
SERIAL NO

08518307

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Abstract

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A thin film forming method for forming a thin film on a surface of a substrate having a stepped portion due to a difference in level, includes steps of performing first thin film deposition with plasma generated in a processing chamber by applying high-frequency voltages to electrodes, performing thin film shaping with plasma generated in the processing chamber by applying a high-frequency voltage to a coil, and performing second thin film deposition with plasma generated in the processing chamber by applying high-frequency voltages to the electrodes.

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Patent Owner(s)

Patent OwnerAddress
MATSUSHITA ELECTRIC INDUSTRIAL CO LTDOSAKA JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nakayama, Ichiro Kadoma, JP 80 1341
Okumura, Tomohiro Neyagawa, JP 151 1895
Suzuki, Naoki Neyagawa, JP 126 1643
Yamada, Yuichiro Suita, JP 63 1319

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