Two dimensional lithographic proximity correction using DRC shape functions

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United States of America Patent

PATENT NO 5920487
SERIAL NO

08810561

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Abstract

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Integrated circuit designs are continually shrinking in size. Lithographic processes are used to transfer these designs to a semiconductor substrate. These processes typically require that the exposure wavelength of light be shorter than the smallest dimension of the elements within the circuit design. When this is not the case, exposure energy such as light behaves more like a wave than a particle. Additionally, mask manufacturing, photoresist chemical diffusion, and etch effects cause pattern transfer distortions. The result is that circuit elements do not print as designed. To counter this effect the circuit designs themselves can be altered so that the final printed results better matches the initial desired design. The process of altering designs in this way is called Lithographic Proximity Correction (LPC). Square (142), cross (162), octagon (172), and hammerhead (202) serifs are added to integrated circuit designs by shape manipulation functions to perform two dimensional (2-D) LPC.

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Patent Owner(s)

Patent OwnerAddress
SHENZHEN XINGUODU TECHNOLOGY CO LTD518000 17B JINSONG BUILDING TAIRAN 4TH ROAD SHATOU STREET FUTIAN DISTRICT SHENZHEN CITY GUANGDONG PROVINCE SHENZHEN CITY GUANGDONG PROVINCE 518000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Browning, Clyde H Briarcliff, TX 2 51
Grobman, Warren D Austin, TX 11 540
Kling, Michael E Austin, TX 7 435
Lucas, Kevin D Austin, TX 15 588
Reich, Alfred J Austin, TX 6 391
Roman, Bernard J Austin, TX 24 899

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