Method of making an active matrix type display
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United States of America Patent
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-
Jul 13, 1999
Issued Date -
N/A
app pub date -
Nov 12, 1997
filing date -
Nov 12, 1996
priority date (Note) -
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status (Latency Note)
Importance
Abstract
There is provided an active matrix type display in which thin film transistors having required characteristics are provided selectively in a pixel matrix portion and a peripheral driving circuit portion. In a structure having the pixel matrix portion and the peripheral driving circuit portion on the same substrate, N-channel type thin film transistors having source and drain regions formed through a non-self-alignment process and low concentrate impurity regions formed through a self-alignment process are formed in the pixel matrix portion and in an N-channel driver portion of the peripheral driving circuit portion. A P-channel type thin film transistor in which no low concentrate impurity region is formed and source and drain regions are formed only through the self-alignment process is formed in a P-channel driver portion of the peripheral driving circuit portion.
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