Method for forming via contact hole in a semiconductor device
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United States of America Patent
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Jul 20, 1999
Issued Date -
N/A
app pub date -
Oct 3, 1997
filing date -
Feb 19, 1997
priority date (Note) -
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Abstract
A method of plasma etching photoresist and sidewall polymer with an etch gas mixture comprising a fluorine containing gas (CF.sub.4 or NF.sub.3) and H.sub.2 O demonstrating very aggressive ashrate of photoresist but maintains an exceptionally low etch rate for titanium nitride and other metals is provided. The very low TiN etch rate permits the inventive method to effectively breakdown sidewall polymer without removing any significant amount of these metals. The invention is particularly suited for stripping sidewall polymer from etched via holes and from etched metal lines. Vias fabricated with this technique exhibit exceptionally low resistance.
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