Process for fabricating low leakage current electrode for LPCVD titanium oxide films
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United States of America Patent
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Jul 27, 1999
Grant Date -
N/A
app pub date -
Apr 30, 1996
filing date -
Apr 10, 1996
priority date (Note) -
Expired
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Abstract
A process for fabricating electrodes for the capacitor dielectric of semiconductor memory devices with low leakage current characteristics is disclosed. The process comprises the steps of first depositing a titanium oxide film over a semiconductor silicon substrate. The deposited titanium oxide film is then annealed. A layer of tungsten nitride top electrode is then deposited on the annealed titanium oxide film. A second annealing procedure is then conducted to simulate post electrode high temperature process.
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