Method of laser ablation of semiconductor structures
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United States of America Patent
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Aug 3, 1999
Grant Date -
N/A
app pub date -
Oct 21, 1997
filing date -
Oct 21, 1997
priority date (Note) -
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Abstract
Disclosed is a process for exposing a metal-containing surface feature on an integrated circuit wafer by laser ablation. According to the invention, a silicon dioxide passivation layer is provided upon the surface feature. The silicon dioxide layer is transparent to electromagnetic radiation having a specified wavelength, such that the electromagnetic radiation is directed through the silicon dioxide layer onto the underlying surface feature. A portion of the surface feature is ablated. Ablation of the surface feature causes removal of an overlying portion of the silicon dioxide layer, thereby exposing the surface feature. Laser ablation may further be performed on optional overlying layers of silicon nitride and polyimide.
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