Europium-containing group IIA fluoride epitaxial layer on silicon
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United States of America Patent
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Aug 3, 1999
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N/A
app pub date -
Sep 15, 1997
filing date -
Sep 24, 1996
priority date (Note) -
Expired
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Abstract
A light-emitting, specifically electroluminescent, europium-containing Group IIA fluoride epitaxial layer on silicon with a europium concentration in the range of from about 4 to about 40 wt % and a molecular beam epitaxy method for growth thereof are provided. Also provided is a light-emitting, specifically electroluminescent, device including a europium-containing Group IIA fluoride epitaxial layer on silicon with a europium concentration in the range of from about 4 to about 40 wt %. The Group IIA fluoride layer exhibits electroluminescence in the wavelength range of from about 450 to about 700 nm.
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