Semiconductor integrated circuit device and low breakdown voltage zener diode
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United States of America Patent
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Aug 10, 1999
Grant Date -
N/A
app pub date -
Dec 9, 1997
filing date -
Jul 8, 1997
priority date (Note) -
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Abstract
Anode and cathode regions at a principal surface of a semiconductor substrate have the same characteristics as source and drain regions of a P type MOS transistor. A cathode region is superposed partially on the anode region at the principal surface of the semiconductor substrate, the cathode region having the same characteristics as source and drain regions of an N type MOS transistor. The cathode and anode regions form a Zener diode. The Zener diode may be short-circuited by a large current flow, i.e., zapping, or used as a voltage regulator.
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