Thin film tantalum oxide capacitors and resulting product

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United States of America Patent

PATENT NO 5936831
SERIAL NO

08814051

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Abstract

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In accordance with the invention, a thin film capacitor including a dielectric of nitrogen or silicon-doped tantalum oxide and at least one electrode including chromium. Preferably the capacitor is fabricated by anodically oxidizing TaN.sub.x or Ta.sub.2 Si and forming a Cr counterelectrode. The method is fully compatible with MCM processing. It produces anodic Ta.sub.2 O.sub.5 capacitors having exceptionally low leakage currents (<1 nA/cm.sup.2 at 10 V), high breakdown fields (>4 MV/cm) and high capacitance densities (70 nF/cm.sup.2). The devices are stable at 350.degree. C. with excellent capacitor properties and are particularly useful as thin film capacitors of large area (>1 mm.sup.2).

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Patent Owner(s)

Patent OwnerAddress
BELL SEMICONDUCTOR LLC401 N MICHIGAN AVE SUITE 1600 CHICAGO IL 60611

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kola, Ratnaji Rao Berkeley Heights, NJ 3 156
Tai, King Lien Berkeley Heights, NJ 34 1021

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