Method for improving wiring contact in semiconductor devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5937327
SERIAL NO

08803953

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A conductive material is buried into a hole portion of a layer insulating film. A contact portion of the buried conductive material coming in contact with an upper wiring is formed in a convex or concave shape. Materials of the buried conductive material and the upper wiring are selected such that these materials are different from each other. When an upper face of an opening portion of the buried conductive material in a hole portion is formed in a conical shape and .alpha. is set to an angle formed between a surface of the insulating film and a conical slanting face of the upper face of the buried conductive material, a contact area between the buried conductive material and an upper wiring member is equal to 1/cos.alpha. times a contact area between the buried conductive material and the upper wiring member provided in a case in which the upper face of the buried conductive material is formed in the shape of a flat face. In this structure, no contact area between the buried conductive material and the upper wiring member is greatly reduced even when a shift in position between the hole and the upper wiring member is caused.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
RICOH COMPANY LTDTOKYO 143-8555

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawashima, Ikue Kobe, JP 38 637

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation