Method of forming hydrogen-free diamond like carbon (DLC) films
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United States of America Patent
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Aug 17, 1999
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N/A
app pub date -
Jul 2, 1997
filing date -
Nov 2, 1995
priority date (Note) -
Expired
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Abstract
The present invention relates to a method for forming substantially hydrogen free DLC layers, wherein DLC layer of thickness about 1 to 100 nanometers is deposited over a sample substrate or a field emitter array and subsequently exposed to etching plasma comprising fluorine gas, wherein during the latter step, hydrogen contained in the substrate is eliminated by chemical etching reaction with fluorine, wherein steps to form the hydrogen free DLC layer can be repeated to obtain a predetermined thickness of a DLC film.
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