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Abstract

The attenuated phase shift mask in accordance with one embodiment of the present invention for use in lithography at or below 0.20 .mu.m and for use at wavelengths below 300 nm includes a substrate, a first layer disposed on the substrate, and a second layer disposed on the first layer. The first layer is a group IV, V or VI transitional metal nitride and the second layer is Si.sub.x N.sub.y or the first layer is Si.sub.x N.sub.y and the second layer is a group IV, V or VI transitional metal nitride. The mask may include a third layer disposed on the second layer and a fourth layer disposed on the second layer. The third layer is a group IV, V or VI transitional metal nitride if the second layer is Si.sub.x N.sub.y and is Si.sub.x N.sub.y if the second layer is a group IV, V or VI transitional metal. The fourth layer is a group IV, V or VI transitional metal nitride if the third layer is Si.sub.x N.sub.y and is Si.sub.x N.sub.y if the third layer is a group IV, V or VI transitional metal. The attenuated phase shift mask has a thickness between about 500 angstroms and 2000 angstroms, with the ratio of the thickness of the Si.sub.x N.sub.y to the group IV, V or VI transitional metal nitride being about 85 to 15.

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First Claim