Semiconductor device with x-ray absorption layer
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United States of America Patent
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Aug 17, 1999
Issued Date -
N/A
app pub date -
Oct 17, 1997
filing date -
Mar 22, 1995
priority date (Note) -
Expired
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Abstract
In a thin film capacitor of a random access memory including a lower electrode, a dielectric film and an upper electrode, generation of defects in the dielectric film is suppressed. In another way, impurity diffusion into the dielectric film is prevented. In still another way, lattice matching of the dielectric film and the electrodes is realized. Thus, a reduced dielectric constant of the capacitor is prevented, and a quality of the semiconductor device is increased.
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