Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch residue and polystringers
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United States of America Patent
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Aug 17, 1999
Grant Date -
N/A
app pub date -
Jan 21, 1998
filing date -
Jan 21, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for fabricating a first memory cell and a second memory cell electrically isolated from each other. The method including forming a first polysilicon (poly I) layer on an oxide coated substrate and masking the poly I layer to pattern the first memory cell and the second memory cell and an unmasked portion therebetween. The unmasked portion of the poly I layer is transformed into an insulator such that the insulator electrically isolates the poly I layer (e.g., floating gate) of the first memory cell from the poly I layer (e.g., floating gate) of the second memory cell.
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