Electrically conductive interconnects for integrated circuits
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United States of America Patent
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Aug 17, 1999
Grant Date -
N/A
app pub date -
Dec 27, 1995
filing date -
Dec 27, 1995
priority date (Note) -
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Abstract
A sharp transition or step is first formed on the surface of a semiconductor material. A layer of interconnect metal is deposited by conformal CVD and substantially the same thickness of the metal as deposited is removed by anisotropic etching, leaving a narrow line of the interconnect metal at the step portion to serve as an interconnect line. Interconnect lines of 0.5 micron or below can be achieved since the process is not limited by photostepper resolution.
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