Method of forming highly-integrated thin film capacitor with high dielectric constant layer

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5943547
SERIAL NO

08926369

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a capacitor including a silicon substrate and an insulating layer formed on the silicon substrate having a contact hole, a lower electrode layer including a silicon diffusion preventing conductive layer and an oxidation resistance conductive layer, an upper electrode layer, and a high dielectric constant layer therebetween, the silicon diffusion preventing layer is located on or within the contact hole and is isolated from the high dielectric constant layer. The high dielectric constant layer is formed on an upper surface and a side surface of the oxidation resistance conductive layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RENESAS ELECTRONICS CORPORATIONTOKYO11993

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lesaicherre, Pierre Yves Tokyo, JP 2 32
Yamamichi, Shintaro Tokyo, JP 89 1091

Cited Art Landscape

Patent Info (Count) # Cites Year
 
RAMTRON INTERNATIONAL CORPORATION (1)
* 5580814 Method for making a ferroelectric memory cell with a ferroelectric capacitor overlying a memory transistor 56 1995
 
RENESAS ELECTRONICS CORPORATION (1)
* 5466964 Semiconductor device capable of increasing reliability 9 1993
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
* 5382817 Semiconductor device having a ferroelectric capacitor with a planarized lower electrode 65 1993
 
MOTOROLA, INC. (1)
* 5567636 Process for forming a nonvolatile random access memory array 17 1995
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