Method of forming highly-integrated thin film capacitor with high dielectric constant layer

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United States of America Patent

PATENT NO 5943547
SERIAL NO

08926369

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Abstract

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In a capacitor including a silicon substrate and an insulating layer formed on the silicon substrate having a contact hole, a lower electrode layer including a silicon diffusion preventing conductive layer and an oxidation resistance conductive layer, an upper electrode layer, and a high dielectric constant layer therebetween, the silicon diffusion preventing layer is located on or within the contact hole and is isolated from the high dielectric constant layer. The high dielectric constant layer is formed on an upper surface and a side surface of the oxidation resistance conductive layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RENESAS ELECTRONICS CORPORATIONTOKYO11913

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lesaicherre, Pierre Yves Tokyo, JP 2 32
Yamamichi, Shintaro Tokyo, JP 89 1254

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