Method of processing a semiconductor wafer for controlling drive current
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United States of America Patent
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Aug 24, 1999
Grant Date -
N/A
app pub date -
Mar 29, 1996
filing date -
Mar 29, 1996
priority date (Note) -
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Abstract
Transistor drive current is controlled by controllably varying light exposure across a semiconductor substrate wafer based on an integrated circuit parameter. Integrated circuit parameters upon which the light exposure is varied include gate oxide thickness, rapid temperature annealing (RTA) temperature, polyetch bias and the like.
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