Electrostatic discharge protection utilizing microelectromechanical switch
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United States of America Patent
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Aug 31, 1999
Grant Date -
N/A
app pub date -
Aug 17, 1998
filing date -
Aug 17, 1998
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An integrated circuit having electrostatic discharge protection. The integrated circuit is built from a semiconducting substrate. A circuit is formed within the semiconductor substrate. The circuit has an input and a ground. A voltage activated microelectromechanical switch is fabricated within the semiconducting substrate utilizing integrated circuit techniques. The microelectromechanical switch is coupled across the circuit input and the circuit ground. The voltage activated microelectromechanical switch couples the circuit input to the circuit ground when an electrostatic discharge voltage of sufficient magnitude is applied to the input of the circuit such that the electrostatic discharge is dissipated to ground through the microelectromechanical switch thereby protecting the circuit from ESD.
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