Optical dielectric thickness monitor for chemical-mechanical polishing process monitoring
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United States of America Patent
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Sep 7, 1999
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app pub date -
Jul 29, 1996
filing date -
Jul 29, 1996
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Abstract
An apparatus for chemical-mechanical-polishing(CMP) is described which employs a dedicated optical film thickness monitor for quasi in-situ assessment of the thickness of a dielectric film on an integrated circuit wafer during CMP operations involving planarization and polish-back. The wafers being polished remain mounted on the CMP wafer carrier and are transported from the polishing platen to the optical film thickness measuring device by an integral mechanical transport assembly which can be operated either manually or automatically by a computer. Real-time polishing rates are determined after each polish/measurement cycle so that time variant polishing rates are redressed.
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