Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers
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United States of America Patent
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Sep 7, 1999
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N/A
app pub date -
May 17, 1996
filing date -
May 17, 1996
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Expired
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Abstract
The present applicants have discovered a method for making thin films comprising tantalum oxide that enhances the dielectric constant with or without TiO.sub.2 doping. Specifically, applicants have discovered sputtering Ta.sub.2 O.sub.5 in an oxygen-rich ambient at a temperature in excess of 450.degree. C. and preferably in excess of 550.degree. C., produces a new crystalline phase thin film having enhanced dielectric properties.
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