Semiconductor device and method of fabricating same
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United States of America Patent
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Sep 7, 1999
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N/A
app pub date -
Nov 5, 1996
filing date -
Nov 7, 1995
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Abstract
A semiconductor device having CMOS circuits formed on a glass substrate. The CMOS circuits are composed of TFTs. Lightly doped regions are formed only in the N-channel TFTs. When P-channel TFTs are formed, the conductivity type of the lightly doped regions is converted by a boron ion implant. Each CMOS circuit consists of an N-channel TFT having the lightly doped regions and a P-channel TFT having no lightly doped regions.
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