High speed, noise immune, single ended sensing scheme for non-volatile memories
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United States of America Patent
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Sep 7, 1999
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N/A
app pub date -
Dec 12, 1997
filing date -
Dec 12, 1997
priority date (Note) -
Expired
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Abstract
A single ended sensing scheme amplifies the logic state stored within a non-volatile memory circuit by relying upon three stages, a clamping circuit, a first operational amplifier and a second operational amplifier. The clamping circuit clamps the voltage at a voltage level with a small voltage swing between the logic states. The first stage and second stage operational amplifiers increase the clamped voltage level. A reference memory circuit ensures that the sensing scheme output is properly adjusted to compensate for voltage and temperature variations as well as noise injection from the power supply and ground.
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