Method of forming an interconnect
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United States of America Patent
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Sep 7, 1999
Grant Date -
N/A
app pub date -
Apr 9, 1996
filing date -
Apr 9, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for fabricating a damascene interconnect includes the steps of depositing a metal layer of the surface of an insulating film; etching the metal layer and the insulating film to form an insulating groove; depositing a silicon layer on an upper surface on the metal layer and on each sidewall and a bottom of the insulating groove; annealing the silicon layer and the metal layer to form a silicide layer; implanting ions in the bottom of the insulating groove; and depositing an interconnect material in the insulating groove using selective chemical vapor deposition. In one embodiment, the metal layer is a titanium layer, the interconnect material is tungsten, and the implanted ions are arsenic ions.
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