DFB laser diode structure having complex optical grating coupling
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United States of America Patent
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Sep 14, 1999
Grant Date -
N/A
app pub date -
Nov 25, 1997
filing date -
May 31, 1995
priority date (Note) -
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Abstract
In the DFB laser diode structure, having complex optical grating coupling, the grating has a layer (52) made from volumetric index semiconductor material, and a layer (53) made from volumetric absorption semiconductor material, the two layers (52, 53) being situated one above another and not being phase-shifted with respect to one another.
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