Integrated circuit ferroelectric memory devices including resistors in periphery region

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5955774
SERIAL NO

08873641

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Integrated circuit ferroelectric memory devices include an integrated circuit substrate which includes a cell region and a periphery region. A plurality of ferroelectric memory cells are formed in the cell region, including a plurality of ferroelectric capacitors. The ferroelectric capacitors each include a lower electrode, a ferroelectric layer on the lower electrode, and an upper electrode on the ferroelectric layer opposite the lower electrode. A first material layer is included on the upper electrodes in the cell region, opposite the ferroelectric layer and on the integrated circuit substrate in the peripheral region. The first material layer, which may be a semiconductor layer or an insulator layer, forms a plurality of resistors in the periphery region. Thus, a semiconductor layer or an insulator layer can be used as a resistor in the periphery region of the memory device without deteriorating the capacitor characteristics. Adhesion of the upper electrode to interconnection layers which are subsequently formed and to dielectric films which are subsequently formed can also be enhanced by the first material layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SAMSUNG ELECTRONICS CO., LTD.SUWON-SI GYEONGGI-DO59944

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Chang-seok Kyungki-do, KR 46 439

Cited Art Landscape

Patent Info (Count) # Cites Year
 
CYPRESS SEMICONDUCTOR CORPORATION (1)
* 5475248 Semiconductor device with a conductive reaction-preventing film 70 1994
 
NATIONAL SEMICONDUCTOR CORPORATION (1)
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RAMTRON INTERNATIONAL CORPORATION (1)
* 5005102 Multilayer electrodes for integrated circuit capacitors 145 1989
 
HITACHI, LTD. (1)
* 4805147 Stacked static random access memory cell having capacitor 41 1986
* Cited By Examiner

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