Trench/hole fill processes for semiconductor fabrication
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United States of America Patent
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Sep 21, 1999
Grant Date -
N/A
app pub date -
Aug 9, 1996
filing date -
Aug 9, 1996
priority date (Note) -
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Abstract
A contact space filled with conductive material having good step coverage is disclosed. The contact space is formed in a dielectric layer with an upper surface. The contact space has sidewalls comprised of the dielectric layer and a bottom comprised of an underlying layer. The contact space is filled by first depositing a layer of an amorphous material such as TiAl.sub.3 over the bottom and sidewalls of the contact space, then filling the contact space with a metallic fill material such as an aluminum-containing fill material. The amorphous material is chosen particularly to have low reactivity with the metallic fill material, so that mobility of the metallic fill material over the surface upon which it is deposited is facilitated.
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