Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell

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United States of America Patent

PATENT NO 5961944
SERIAL NO

08894030

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Abstract

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An object of the present invention is to provide a process and apparatus for the continuous flow production of polycrystalline silicon from metallic silicon or silicon oxide as a raw material and also for the manufacture of a wafer by using it, which process and apparatus permit the mass production at a low cost. The above object can be attained by the manufacture of polycrystalline silicon and a silicon wafer for a solar cell by the following steps: (A) smelting metallic silicon under reduced pressure, carrying out solidification for the removal of the impurity components from the melt, thereby obtaining a first ingot, (B) removing the impurity concentrated portion from the ingot by cutting, (C) re-melting the remaining portion, removing boron and carbon from the melt by oxidizing under an oxidizing atmosphere, and blowing a mixed gas of argon and water to carry out deoxidization, (D) casting the deoxidized melt into a mold, and carried out directional solidification to obtain a second ingot, and (E) removing the impurity concentrated portion of the ingot obtained by directional solidification by cutting.

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Patent Owner(s)

Patent OwnerAddress
KAWASAKI STEEL CORPORATION A CORPORATION OF JAPANKOBE-SHI 1-28 KITAHONMACHIDORI 1-CHOME CHUO-KU HYOGO 651-0075

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aratani, Fukuo Chiba, JP 6 90
Baba, Hiroyuki Chiba, JP 74 833
Hanazawa, Kazuhiro Chiba, JP 15 155
Kato, Yoshiei Chiba, JP 12 95
Nakamura, Naomichi Chiba, JP 51 278
Sakaguchi, Yasuhiko Chiba, JP 15 120
Yuge, Noriyoshi Chiba, JP 4 92

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