Method for cleaning semiconductor wafers and
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United States of America Patent
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Oct 5, 1999
Issued Date -
N/A
app pub date -
Apr 10, 1997
filing date -
Jul 3, 1996
priority date (Note) -
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Abstract
A low temperature in-situ precleaning process for a semiconductor surface is disclosed. Ambient reactant gases, such as NF.sub.3 and GeH.sub.4, having a partial pressure of between approximately 10.sup.-8 and 700 Torr, are pulsed in a batch furnace at temperatures in the approximate range of 250 to 950 degrees Celsius and pressure in the approximate range of 4.times.10.sup.3 to 20.times.10.sup.3 Torr. This forms material on the surface that easily vaporizes in that temperature and pressure range, providing a clean surface for formation of the next layer. A similar in-situ cleaning process is performed at temperature ranges of between approximately 300 to 1,000 degrees Celsius for the equipment utilized in processing semiconductor substrates.
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