Semiconductor device with polysilicon layer of good crystallinity and its manufacture method
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United States of America Patent
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Oct 19, 1999
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app pub date -
Nov 21, 1997
filing date -
May 20, 1997
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Abstract
A multilayer polysilicon semiconductor device having a first layer of amorphous semiconductor deposited on the surface of an underlying substrate. The first layer is polycrystallized by applying an energy beam to the first layer. A second layer is deposited on the surface of the polycrystallized first layer, the second layer being made of amorphous semiconductor having the same composition as the first layer or polycrystalline semiconductor. Crystallinity of the second layer is changed by applying an energy beam to the second layer. The substrate may be heated when the energy beam is applied to the second layer.
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