Structure for thin film capacitors

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5973908
SERIAL NO

08969218

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A capacitor is fabricated on a base surface by applying a first pattern of electrical conductors (a first capacitor plate) over the base surface with an outer surface of the first pattern of electrical conductors including molybdenum. A first hard portion of a capacitor dielectric layer including amorphous hydrogenated carbon is deposited over the first capacitor plate and the base surface, a soft portion of the capacitor dielectric layer is deposited over the first hard portion, and a second hard portion of the capacitor dielectric layer is deposited over the soft portion. The deposition of the soft portion occurs at a lower bias voltage than the deposition of the first and second hard portions. A second pattern of electrical conductors (a second capacitor plate) is applied over the capacitor dielectric layer which is then patterned. A polymer layer is applied over the first and second capacitor plates, and two vias are formed, a first via extending to the first capacitor plate and a second via extending to the second capacitor plate. An electrode-coupling pattern of electrical conductors is applied over the polymer layer, a first portion extending into the first via and a second portion extending into the second via. Deposition of the capacitor dielectric layer can include using a methylethylketone precursor. Additional capacitor dielectric layers and plates having staggered via landing pads can be layered to increase the capacitance.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
GENERAL ELECTRIC COMPANYSCHENECTADY, NY19473

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Durocher, Kevin Matthew Waterford, NY 58 1253
Gorowitz, Bernard Clifton Park, NY 27 1400
Saia, Richard Joseph Schenectady, NY 42 1341

Cited Art Landscape

Patent Info (Count) # Cites Year
 
GENERAL ELECTRIC COMPANY (4)
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POLARIS INNOVATIONS LIMITED (1)
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RESEARCH TRIANGLE INSTITUTE (1)
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TEXAS INSTRUMENTS INCORPORATED (1)
* 5036020 Method of fabricating microelectronic device incorporating capacitor having lowered topographical profile 10 1990
 
DOW CORNING CORPORATION (1)
* 5262201 Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added 48 1990
 
LOCKHEED MARTIN CORPORATION (1)
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FAHRENHEIT THERMOSCOPE LLC (1)
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* 5563762 Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit 105 1994
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 6285050 Decoupling capacitor structure distributed above an integrated circuit and method for making same 31 1997
 
GENERAL ELECTRIC COMPANY (2)
* 6242282 Circuit chip package and fabrication method 110 1999
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QUALCOMM INCORPORATED (9)
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* 2003/0122,244 Integrated chip package structure using metal substrate and method of manufacturing the same 19 2002
8535976 Method for fabricating chip package with die and substrate 1 2003
* 9136246 Integrated chip package structure using silicon substrate and method of manufacturing the same 0 2004
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ADVANCED MICRO DEVICES, INC. (1)
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SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION (1)
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MICRON TECHNOLOGY, INC. (1)
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SAMSUNG ELECTRO-MECHANICS CO., LTD. (2)
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DONGBU HITEK CO., LTD. (1)
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BLACKBERRY LIMITED (2)
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SAMSUNG ELECTRONICS CO., LTD. (1)
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WASEDA UNIVERSITY (1)
7836567 Thin film capacitor, high-density packaging substrate incorporating thin film capacitor, and method for manufacturing thin-film capacitor 2 2006
 
Ultrasource, Inc. (9)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
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7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
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7425877 Lange coupler system and method 1 2005
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INTEL CORPORATION (2)
6480370 Polymeric dielectric material for high-energy density capacitors 4 1999
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Shipley Company, L.L.C. (1)
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CHECKPOINT SYSTEMS, INC. (2)
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AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (1)
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NANODYNAMICS, INC. (2)
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* Cited By Examiner