Ferroelectric thin-film capacitor

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United States of America Patent

PATENT NO 5973911
SERIAL NO

08851053

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Abstract

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A method for making a ferroelectric thin film capacitor. A Ti adhesive layer is formed on a silicon substrate covered with a silicon oxide layer. On this, a Pt film is deposited as a lower capacitor electrode, over which a ferroelectric film of high permittivity, such a crystallized BST film, is deposited by sputtering. Then an upper Pt electrode is deposited over the BST film by sputtering to form a capacitor. Finally, the capacitor is heat-treated in an oxidizing atmosphere to eliminate any leakage holes, that cause leakage current, in the ferroelectric thin film caused by the sputtering.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TEXAS INSTRUMENTS INCORPORATEDDALLAS, TX17797

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nishioka, Yasushiro Tsukuba, JP 19 671

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