Ferroelectric thin-film capacitor

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5973911
SERIAL NO

08851053

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Abstract

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A method for making a ferroelectric thin film capacitor. A Ti adhesive layer is formed on a silicon substrate covered with a silicon oxide layer. On this, a Pt film is deposited as a lower capacitor electrode, over which a ferroelectric film of high permittivity, such a crystallized BST film, is deposited by sputtering. Then an upper Pt electrode is deposited over the BST film by sputtering to form a capacitor. Finally, the capacitor is heat-treated in an oxidizing atmosphere to eliminate any leakage holes, that cause leakage current, in the ferroelectric thin film caused by the sputtering.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TEXAS INSTRUMENTS INCORPORATEDDALLAS, TX17541

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nishioka, Yasushiro Tsukuba, JP 19 665

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SHARP KABUSHIKI KAISHA (2)
* 5443030 Crystallizing method of ferroelectric film 11 1994
* 5548475 Dielectric thin film device 27 1994
 
U.S. PHILIPS CORPORATION (1)
* 5122477 Method of manufacturing a semiconductor device comprising capacitors which form memory elements and comprise a ferroelectric dielectric material having multilayer lower and upper electrodes 69 1991
 
CANON KABUSHIKI KAISHA (1)
* 5512538 Metal oxide material with Ln, Sr, Cu, Re, O, and optionally Ca 4 1994
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 6773982 Feram cell with internal oxygen source and method of oxygen release 0 2001
 
Other [Check patent profile for assignment information] (1)
* 2006/0099,831 Silicon source reagent compositions, and method of making and using same for microelectronic device structure 22 2005
 
U.S. BANK NATIONAL ASSOCIATION (1)
* 2010/0273,305 Electro- and Electroless Plating of Metal in the Manufacture of PCRAM Devices 4 2010
 
SONY CORPORATION (1)
* 6381119 Electronic thin film material, dielectric capacitor, and nonvolatile memory 5 2000
 
ADVANCED TECHNOLOGY MATERIALS, INC. (1)
* 7012292 Oxidative top electrode deposition process, and microelectronic device structure 4 1998
 
MICRON TECHNOLOGY, INC. (37)
* 6162666 Method to form a DRAM capacitor using low temperature reoxidation 4 1999
6891217 Capacitor with discrete dielectric material 2 1999
6587365 Array architecture for depletion mode ferroelectric memory devices 26 2000
6574131 Depletion mode ferroelectric memory device and method of writing to and reading from the same 2 2000
6515889 Junction-isolated depletion mode ferroelectric memory 12 2000
6366489 Bi-state ferroelectric memory devices, uses and operation 4 2000
* 6448133 Method to form a DRAM capacitor using low temperature reoxidation 1 2000
* 6660535 Method of forming haze- free BST films 4 2001
6665206 Array architecture for depletion mode ferroelectric memory devices 7 2002
6876022 Junction-isolated depletion mode ferroelectric memory devices 4 2002
* 2003/0086,287 Junction-isolated depletion mode ferroelectric memory devices 0 2002
6944043 Junction-isolated depletion mode ferroelectric memory devices 1 2003
6791862 Junction-isolated depletion mode ferroelectric memory devices 3 2003
6646906 Methods of reading ferroelectric memory cells 10 2003
6939723 Method of forming haze-free BST films 0 2003
6924968 Haze-free BST films 0 2003
6852593 Haze-free BST films 1 2003
6937501 Writing to ferroelectric memory devices 1 2003
6882560 Reading ferroelectric memory cells 2 2003
6888738 Methods of writing junction-isolated depletion mode ferroelectric memory devices 3 2004
6888747 Methods of reading junction-isolated depletion mode ferroelectric memory devices 2 2004
* 2004/0257,853 Methods of writing junction-isolated depletion mode ferroelectric memory devices 0 2004
7002198 Junction-isolated depletion mode ferroelectric memory devices 1 2004
6982449 Junction-isolated depletion mode ferroelectric memory devices 1 2004
6903960 Junction-isolated depletion mode ferroelectric memory devices 1 2004
6888185 Junction-isolated depletion mode ferroelectric memory devices 1 2004
* 2005/0024,929 Junction-isolated depletion mode ferroelectric memory devices 0 2004
* 2005/0024,920 Junction-isolated depletion mode ferroelectric memory devices 0 2004
* 2005/0024,918 Junction-isolated depletion mode ferroelectric memory devices 0 2004
6995419 Semiconductor constructions having crystalline dielectric layers 2 2004
7199413 Junction-isolated depletion mode ferroelectric memory devices and systems 0 2005
7236387 Writing to ferroelectric memory devices 0 2005
7123503 Writing to ferroelectric memory devices 0 2005
* 2005/0231,996 Writing to ferroelectric memory devices 0 2005
7166885 Semiconductor devices 0 2005
7253464 Junction-isolated depletion mode ferroelectric memory devices and systems 0 2006
* 8623694 Methods of forming fast ion conductors and memory devices comprising diffused metal ions 0 2010
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 6466427 Microelectronic capacitor structure compatible with copper containing microelectronic conductor layer processing 22 2000
 
SAMSUNG ELECTRONICS CO., LTD. (1)
* 6472319 Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment 1 2001
 
SUMITOMO OSAKA CEMENT CO., LTD. (2)
* 8774564 Optical waveguide element module 0 2009
* 2011/0013,863 OPTICAL WAVEGUIDE ELEMENT MODULE 0 2009
 
HITACHI, LTD. (2)
* 6777248 Dielectric element and manufacturing method therefor 26 2000
* 6579754 Semiconductor memory device having ferroelectric film and manufacturing method thereof 7 2001
 
ROUND ROCK RESEARCH, LLC (4)
7005695 Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region 10 2000
* 6953721 Methods of forming a capacitor with an amorphous and a crystalline high K capacitor dielectric region 6 2001
* 2001/0015,453 CAPACITOR FORMING METHODS 2 2001
7446363 Capacitor including a percentage of amorphous dielectric material and a percentage of crystalline dielectric material 3 2006
 
RENESAS TECHNOLOGY CORP. (2)
6995058 Semiconductor memory device and manufacturing method thereof 0 2002
* 2002/0182,754 Semiconductor memory device and manufacturing method thereof 0 2002
 
ENTEGRIS, INC. (2)
7750173 Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films 0 2008
7858816 Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta.sub.20.sub.5 thin films 0 2010
 
Ultrasource, Inc. (9)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
6890629 Integrated thin film capacitor/inductor/interconnect system and method 10 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
INTELLECTUAL VENTURES I LLC (2)
* 7082026 On chip capacitor 0 2001
7015563 On chip capacitor 2 2004
 
RENESAS ELECTRONICS CORPORATION (2)
* 6178139 Semiconductor memory device comprised of a double data rate-synchronous dynamic random access memory 9 1999
6445025 Semiconductor memory device and manufacturing method thereof 0 2001
 
APPLIED MATERIALS, INC. (1)
6617266 Barium strontium titanate annealing process 8 2001
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
* 6614643 Semiconductor device having a capacitor element 6 2002
 
STMICROELECTRONICS SA (1)
* 2004/0131,762 Manufacturing of a high-capacitance capacitor 4 2003
 
FUJITSU SEMICONDUCTOR LIMITED (1)
* 6333529 Capacitor with noble metal electrode containing oxygen 3 1999
 
HYNIX SEMICONDUCTOR INC. (2)
6917114 Semiconductor device and method of fabricating the same 3 2002
* 2003/0042,609 Semiconductor device and method of fabricating the same 2 2002
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (2)
* 6162649 Method of manufacturing ferroelectric memory device 7 1999
* 6329237 Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasma 4 1999
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (5)
* 6212057 Flexible thin film capacitor having an adhesive film 19 1999
6974547 Flexible thin film capacitor and method for producing the same 3 2000
* 6884674 Method for fabricating a semiconductor device including a capacitance insulating film having a perovskite structure 0 2003
* 6891715 Capacitor and method for fabricating the same 5 2003
7413949 Capacitor and method for fabricating the same 0 2005
* Cited By Examiner