Nonvolatile semiconductor memory device capable of storing analog or many-valued data at high speed and with a high degree of accuracy
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United States of America Patent
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Oct 26, 1999
Grant Date -
N/A
app pub date -
Feb 9, 1998
filing date -
Mar 31, 1995
priority date (Note) -
Expired
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Abstract
A nonvolatile semiconductor memory which is capable of a high degree of integration and can conduct the writing of analog data at high speed and with a high degree of accuracy. The memory device comprises two or more semiconductor devices comprising a first MOS transistor having a first floating gate which is electrically insulated, a first electrode which is capacitively coupled with the first floating gate, a second electrode provided with the first floating gate via a tunnel junction, and a third electrode connected to the second electrode via a switch; the present invention is further provided with a fourth electrode connected commonly with the third electrodes of the semiconductor devices, a fifth electrode connected commonly with the source electrodes of the first MOS transistors, a sixth electrode which is capacitively coupled with the fourth electrode, and a seventh electrode which is connected with the fourth electrode via a switch.
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