Method of programming non-volatile memory devices having a NAND type cell array
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 26, 1999
Grant Date -
N/A
app pub date -
Dec 22, 1998
filing date -
Dec 29, 1997
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for programming non-volatile semiconductor memory devices having NAND cell arrays is provided. In a program operation, a pass voltage is applied to unselected word lines, and then a voltage lower than the pass voltage is applied to only the word line which is adjacent to a selected word line and is placed between the selected word line and a reference selection circuit. According to this programming method, the memory device can be programmed without restriction of programming sequence.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully