Step coverage and overhang improvement by pedestal bias voltage modulation
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United States of America Patent
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Nov 2, 1999
Grant Date -
N/A
app pub date -
Dec 12, 1997
filing date -
Dec 12, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention provides a method for depositing a metal film on a substrate, comprising generating a high density plasma in a chamber, sputtering metal particles from a target to the substrate, and applying a modulated radio frequency (RF) bias to the substrate during deposition. Another aspect of the invention provides an apparatus for depositing a metal film on a substrate comprising a high density plasma physical vapor deposition (HDP PVD) chamber and a controller to modulate a RF bias power applied to a substrate in the chamber.
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