Reliable sustained self-sputtering
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United States of America Patent
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Nov 2, 1999
Grant Date -
N/A
app pub date -
Nov 25, 1997
filing date -
Nov 25, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A plasma physical vapor deposition (PVD) reactor configured for self sustained sputtering in which no sputtering working gas is required but the sputtered ions are sufficient to sustain the sputtering from the target. According to the invention, the power applied to the sputtering target is monitored to determine if sustained self-sputtering is being maintained. If the electrical parameters or other parameters in the chamber indicate that the self-sustained plasma has collapsed, a reinitialization procedure is begun including: admitting a working gas such as argon into the chamber; again exciting the plasma; and then effectively eliminating the working gas.
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