Chemical mechanical polishing of FeRAM capacitors
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United States of America Patent
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Nov 2, 1999
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N/A
app pub date -
Nov 20, 1997
filing date -
Nov 20, 1997
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Abstract
A method of fabricating a ferroelectric capacitor structure by sequentially depositing a bottom electrode layer, a ferroelectric layer and a top electrode layer on a base structure, optionally with deposition of a layer of a conductive barrier material beneath the bottom electrode layer, to form a capacitor precursor structure, and planarizing the capacitor precursor structure by chemical mechanical polishing to yield the ferroelectric capacitor structure, e.g., a stack capacitor or trench capacitor. The process is carried out without dry etching of the electrode layers or dry etching of the ferroelectric layer, to yield ferroelectric capacitors having a very small feature size, as for example between 0.10 and 0.20 .mu.m.
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