Fabrication process of a semiconductor device including a dicing process of a semiconductor wafer
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United States of America Patent
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Nov 9, 1999
Grant Date -
N/A
app pub date -
Sep 11, 1997
filing date -
Sep 13, 1996
priority date (Note) -
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status (Latency Note)
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Abstract
A method of fabricating a semiconductor device includes the steps of, after sawing a semiconductor substrate into individual semiconductor chips in a state that the semiconductor substrate is covered by an adhesive tape, applying a dry gas to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, applying an infrared radiation to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, and curing the adhesive layer on the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, by irradiating a ultraviolet radiation to the adhesive tape, wherein the step of applying the dry gas, the step of applying the infrared radiation and the said step of curing the adhesive layer are conducted substantially simultaneously.
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