Resistive interconnect of transistor cells
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United States of America Patent
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-
Nov 9, 1999
Grant Date -
N/A
app pub date -
Apr 3, 1998
filing date -
Apr 3, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A plurality of transistor cells (36) formed on a semiconductor substrate (32) are connected to form a radio frequency power transistor device (30), whereby individual conductive paths (38) are formed on one side of the substrate (32) to connect respective common gate terminals (34) of adjacent transistor cells (36) in series. A further conductive path (40) is formed on an opposite side of the substrate connecting respective drain terminals (35) of the transistor cells (36) in parallel. A resistive element (42) is interposed in the conductive path (38) connecting each adjacent pair of gate terminals (34). The conductivity of the respective resistive elements (42) is selected so as to adequately provide a conductive pathway for connecting the respective gate terminal outputs, while being sufficiently resistive such that each gate terminal 34 'sees' an electrical circuit termination.
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