Color active pixel sensor with electronic shuttering, anti-blooming and low cross-talk
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United States of America Patent
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Nov 16, 1999
Grant Date -
N/A
app pub date -
Feb 13, 1997
filing date -
May 22, 1996
priority date (Note) -
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status (Latency Note)
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Abstract
An active pixel sensor architecture comprising a semiconductor substrate having a plurality of pixels formed, thereon, incorporating microlens and lightshields into the pixel architecture. Each of the pixels further comprising: a photodetector region upon which incident light will form photoelectrons to be collected as a signal charge; a device for transferring the signal charge from the photodetector region to a charge storage region that is covered by a light shield; a sense node that is an input to an amplifier; the sense node being operatively connected to the signal storage region. The pixel architecture facilitates symmetrical design of pixels which allows for incorporation of light shield and microlens technology into the design.
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