Thin film transistor having a heat sink that exhibits a high degree of heat dissipation effect
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United States of America Patent
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Nov 16, 1999
Issued Date -
N/A
app pub date -
Dec 4, 1998
filing date -
Dec 8, 1997
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Abstract
In forming a pair of impurity regions in an active layer, an intrinsic or substantially intrinsic region having a double-sided comb shape is also formed by using a proper mask. The intrinsic or substantially intrinsic region is composed of a portion that effectively functions as a channel forming region and portions in which a channel is not formed and which function as heat sinks. The heat dissipation effect is improved because the heat sinks are formed by the same material as the channel forming region.
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