Pattern forming method using alignment from latent image or base pattern on substrate
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United States of America Patent
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-
Nov 23, 1999
Grant Date -
N/A
app pub date -
Feb 26, 1998
filing date -
Feb 28, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.
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