Method for cold cleaving of laser wafers into bars
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United States of America Patent
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Nov 30, 1999
Grant Date -
N/A
app pub date -
Dec 16, 1997
filing date -
Dec 16, 1997
priority date (Note) -
Expired
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Abstract
The cleavage of semiconductor crystalline wafers into laser diodes or laser diode bars is carried out at a low temperature at which both the semiconductor crystal substrate and the laser-forming laminate structure thereon are imbrittled. Cleavage at such low temperatures permits the cleavage planes to be closer together than was hitherto possible. A thickness to cavity length ratio of the resulting laser diodes or laser diode bars is approximately 1 as a result compared to 3/4 by prior art techniques. Also, the energy required for cleaving is reduced thus ensuring mirror surfaces at the cleavage planes.
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