Silicon etching process for making microchannel plates
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United States of America Patent
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Dec 7, 1999
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N/A
app pub date -
May 8, 1998
filing date -
May 8, 1997
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Abstract
An element with elongated, high aspect ratio channels such as microchannel plate is fabricated by electrochemical etching of a p-type silicon element in a electrolyte to form channels extending through the element. The electrolyte may be an aqueous electrolyte. For use as a microchannel plate, the; the silicon surfaces of the channels can be converted to insulating silicon dioxide, and a dynode material with a high electron emissivity can be deposited onto the insulating surfaces of the channels. New dynode materials are also disclosed.
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